Analog and Digital Switching Characteristics of Transition Metal Oxide Based Resistive Random Access Memory (ReRAM) Devices
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چکیده
Transition Metal Oxide (TMO) Based Resistive Random Access Memory (ReRAM) devices have gathered significant research attention for non-volatile data storage applications. The major advantages lie in terms of scalability, low switching voltages, and process compatibility with the CMOS technologies [1, 2]. However, to take the complete benefit of this enabling technology there are several challenges that need to be addressed. This talk will present our work towards addressing these challenges for ReRAM devices.
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تاریخ انتشار 2013